Germanium Silicon: Physics and Materials - Semiconductors and Semimetals - Robert Hull - Libros - Elsevier Science Publishing Co Inc - 9780127521640 - 2 de noviembre de 1998
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Germanium Silicon: Physics and Materials - Semiconductors and Semimetals

Robert Hull

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Germanium Silicon: Physics and Materials - Semiconductors and Semimetals

Suitable for physicists, chemists, materials scientists, and device engineers in modern industry.


Marc Notes: Includes bibliographical references and index. Table of Contents: "J. C. Bean, " Growth Techniques and Procedures. "R. Hull, " Misfit Strain Accommodation in SiGe Heterostructures. "M. J. Shaw and M. Jaros, " Fundamental Physics of Strained Layer GeSi: Quo Vadis? "F. Cerdeira, " Optical Properties. "S. A. Ringel and P. N. Grillot, " Electronic Properties and Deep Levels in Germanium-Silicon. "J. C. Campbell, " Optical Applications. "K. Eberl, K. Brunner, and O. G. Schmidt, " Si1-yCy and Si1-x-yGexCy Alloy Layers. Subject Index. Publisher Marketing: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Contributor Bio:  Weber, Eicke R fm.author_biographical_note3Contributor Bio:  Bean, John C JOHN C. BEAN is professor of English at Seattle University, where he directs the writing program and chairs the Task Force on Teaching and Learning. He is coauthor (with John D. Ramage) of Writing Arguments (3rd ed., 1995) and Form and Surprise in Composition (1986).

Medios de comunicación Libros     Hardcover Book   (Libro con lomo y cubierta duros)
Publicado 2 de noviembre de 1998
ISBN13 9780127521640
Editores Elsevier Science Publishing Co Inc
Páginas 444
Dimensiones 152 × 229 × 33 mm   ·   884 g
Editor de series Weber, Eicke R. (Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany)
Editor de series Willardson, R. K. (WILLARDSON CONSULTING SPOKANE, WASHINGTON)

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