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Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications - IEEE Press
Kimoto, Tsunenobu (Kyoto University, Japan)
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Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications - IEEE Press
Kimoto, Tsunenobu (Kyoto University, Japan)
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.
400 pages
| Medios de comunicación | Libros Hardcover Book (Libro con lomo y cubierta duros) |
| Publicado | 21 de noviembre de 2014 |
| ISBN13 | 9781118313527 |
| Editores | John Wiley & Sons Inc |
| Páginas | 400 |
| Dimensiones | 251 × 179 × 32 mm · 1,25 kg |
| Lengua | English |